IPA060N06N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPA060N06N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 490 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO-220F

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IPA060N06N datasheet

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IPA060N06N

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA060N06N Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 60 V IPA060N06N TO-220-FP 1 Description Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel

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IPA060N06N

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA060N06N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS

 0.1. Size:1060K  infineon
 ipa060n06nm5s.pdf pdf_icon

IPA060N06N

IPA060N06NM5S MOSFET PG-TO 220 FP OptiMOSTM 5 Power-Transistor, 60 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified

Otros transistores... IPA50R800CE, IPA50R650CE, IPA50R500CE, IPA50R280CE, IPA50R190CE, IPA105N15N3, IPA083N10N5, IPA075N15N3, IRF530, IPA041N04NG, IPA040N06N, IPA029N06N, IRFP4004PBF, IRFP4110PBF, IRFP4127PBF, IRFP4137PBF, IRFP4227PBF