IPA060N06N Datasheet and Replacement

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 60 VIPA060N06NData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 60 VIPA060N06NTO-220-FP1 DescriptionFeatures Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA060N06NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS

IPA060N06NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 60 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified