All MOSFET. IPA060N06N Datasheet

 

IPA060N06N Datasheet and Replacement


   Type Designator: IPA060N06N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-220F
 

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IPA060N06N Datasheet (PDF)

 ..1. Size:1287K  infineon
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IPA060N06N

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 60 VIPA060N06NData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 60 VIPA060N06NTO-220-FP1 DescriptionFeatures Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel

 ..2. Size:200K  inchange semiconductor
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IPA060N06N

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA060N06NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS

 0.1. Size:1060K  infineon
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IPA060N06N

IPA060N06NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 60 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified

Datasheet: IPA50R800CE , IPA50R650CE , IPA50R500CE , IPA50R280CE , IPA50R190CE , IPA105N15N3 , IPA083N10N5 , IPA075N15N3 , IRF530 , IPA041N04NG , IPA040N06N , IPA029N06N , IRFP4004PBF , IRFP4110PBF , IRFP4127PBF , IRFP4137PBF , IRFP4227PBF .

History: IPA040N06N | PK8B0BA

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