IRFP4228PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP4228PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 310 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 78 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 59 nS

Cossⓘ - Capacitancia de salida: 550 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0155 Ohm

Encapsulados: TO247AC

 Búsqueda de reemplazo de IRFP4228PBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRFP4228PBF datasheet

 ..1. Size:300K  international rectifier
 irfp4228pbf.pdf pdf_icon

IRFP4228PBF

PD - 97229A IRFP4228PbF PDP SWITCH Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100 C 170 A Dissipation in PDP Sustain, Energy TJ max 175 C Recovery and Pass

 7.1. Size:301K  international rectifier
 irfp4229pbf.pdf pdf_icon

IRFP4228PBF

PD - 97079B IRFP4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 87 A and Pass Switch Applications

 7.2. Size:296K  international rectifier
 irfp4227pbf.pdf pdf_icon

IRFP4228PBF

PD - 97070A IRFP4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch Applications

 7.3. Size:242K  inchange semiconductor
 irfp4229.pdf pdf_icon

IRFP4228PBF

isc N-Channel MOSFET Transistor IRFP4229 IIRFP4229 FEATURES Static drain-source on-resistance RDS(on) 46m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Repetitive Peak Current Capability for Reliable Operation Short fall & Rise Times For Fast Switching ABSOLUTE MAXIM

MOSTRAR MÁS

Otros transistores... IPA041N04NG, IPA040N06N, IPA029N06N, IRFP4004PBF, IRFP4110PBF, IRFP4127PBF, IRFP4137PBF, IRFP4227PBF, 4N60, IRFP4229PBF, IRFP4232PBF, IRFP4242PBF, IRFP4310ZPBF, IRFP4321PBF, IRFP4332PBF, IRFP4368PBF, IRFP440PBF