IRFP4228PBF MOSFET Datasheet: N-Ch, 150V, 78A. Full specification with pinout and replacement list

IRFP4228PBF Specs and Replacement

Type Designator: IRFP4228PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 78 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm

Package: TO247AC

IRFP4228PBF substitution

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IRFP4228PBF datasheet

..1. Size:300K international rectifier
irfp4228pbf.pdf pdf_icon

PD - 97229A IRFP4228PbF PDP SWITCH Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100 C 170 A Dissipation in PDP Sustain, Energy TJ max 175 C Recovery and Pass ... See More ⇒

7.1. Size:301K international rectifier
irfp4229pbf.pdf pdf_icon

PD - 97079B IRFP4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 87 A and Pass Switch Applications... See More ⇒

7.2. Size:296K international rectifier
irfp4227pbf.pdf pdf_icon

PD - 97070A IRFP4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch Applications ... See More ⇒

7.3. Size:242K inchange semiconductor
irfp4229.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFP4229 IIRFP4229 FEATURES Static drain-source on-resistance RDS(on) 46m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Repetitive Peak Current Capability for Reliable Operation Short fall & Rise Times For Fast Switching ABSOLUTE MAXIM... See More ⇒