IRFP9140N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP9140N
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 67 nS
Cossⓘ - Capacitancia de salida: 400 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.117 Ohm
Encapsulados: TO247AC
Búsqueda de reemplazo de IRFP9140N MOSFET
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IRFP9140N datasheet
irfp9140n.pdf
PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature P-Channel RDS(on) = 0.117 Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc
irfp9140npbf.pdf
PD - 95665 IRFP9140NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = -100V l P-Channel l Fast Switching RDS(on) = 0.117 l Fully Avalanche Rated G l Lead-Free ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re
irfp9140n.pdf
isc P-Channel MOSFET Transistor IRFP9140N IIRFP9140N FEATURES Static drain-source on-resistance RDS(on) 0.117 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and
Otros transistores... IRFP460A, IRFP460LC, IRFP470, IRFP9130, IRFP9131, IRFP9132, IRFP9133, IRFP9140, AO3407, IRFP9141, IRFP9142, IRFP9143, IRFP9150, IRFP9230, IRFP9231, IRFP9232, IRFP9233
History: FDZ5047N
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