IRFP9140N Datasheet and Replacement
Type Designator: IRFP9140N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
Package: TO247AC
- MOSFET Cross-Reference Search
IRFP9140N Datasheet (PDF)
irfp9140n.pdf

PD - 9.1492AIRFP9140NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature P-ChannelRDS(on) = 0.117 Fast SwitchingG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistanc
irfp9140npbf.pdf

PD - 95665IRFP9140NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = -100Vl P-Channell Fast SwitchingRDS(on) = 0.117l Fully Avalanche RatedGl Lead-FreeID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re
irfp9140n.pdf

isc P-Channel MOSFET Transistor IRFP9140NIIRFP9140NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient and
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
Keywords - IRFP9140N MOSFET datasheet
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History: VBNC1303 | IRFS4010PBF



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