IRFP450APBF Todos los transistores

 

IRFP450APBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP450APBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 190 W

Tensión drenaje-fuente |Vds|: 500 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 14 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Tiempo de elevación (tr): 36 nS

Conductancia de drenaje-sustrato (Cd): 307 pF

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: TO247AC

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IRFP450APBF Datasheet (PDF)

0.1. irfp450apbf.pdf Size:195K _international_rectifier

IRFP450APBF
IRFP450APBF

PD -95054SMPS MOSFETIRFP450APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.40 14Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avala

6.1. irfp450a.pdf Size:101K _international_rectifier

IRFP450APBF
IRFP450APBF

PD -91884SMPS MOSFETIRFP450AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40 14A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

6.2. irfp450a.pdf Size:942K _samsung

IRFP450APBF
IRFP450APBF

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.308 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

 6.3. irfp450a sihfp450a.pdf Size:302K _vishay

IRFP450APBF
IRFP450APBF

IRFP450A, SiHFP450AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 64RuggednessCOMPLIANTQgs (nC) 16 Fully Characterized Capacitance andQgd (nC) 26Avalanche Voltage and CurrentConfigu

6.4. irfp450a sihfp450a.pdf Size:309K _infineon

IRFP450APBF
IRFP450APBF

IRFP450A, SiHFP450AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 64RuggednessCOMPLIANTQgs (nC) 16 Fully Characterized Capacitance andQgd (nC) 26Avalanche Voltage and CurrentConfigu

Otros transistores... P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF1404 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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