IRFP4768PBF Todos los transistores

 ..1. Size:329K  international rectifier
 irfp4768pbf.pdf

PD - 97379 IRFP4768PbF HEXFET Power MOSFET D Applications VDSS 250V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 14.5m l High Speed Power Switching G max. 17.5m l Hard Switched and High Frequency Circuits ID 93A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance

 6.1. Size:243K  inchange semiconductor
 irfp4768.pdf

isc N-Channel MOSFET Transistor IRFP4768 IIRFP4768 FEATURES Static drain-source on-resistance RDS(on) 17.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Swit

 8.1. Size:103K  international rectifier
 irfp4710.pdf

PD - 94361 IRFP4710 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014 72A Motor Control Uninterruptible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC Fully Characterized Avalanche Volta

 8.2. Size:178K  international rectifier
 irfp4710pbf.pdf

PD - 95055 IRFP4710PbF HEXFET Power MOSFET AppIications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 0.014 72A l Motor Control l Uninterruptible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC l Fully Charact

 8.3. Size:47K  ixys
 irfp470.pdf

IRFP 470 VDSS = 500 V MegaMOSTMFET ID (cont) = 24 A RDS(on) = 0.23 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C24 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by TJM 96 A

 8.4. Size:243K  inchange semiconductor
 irfp4710.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4710 IIRFP4710 FEATURES Static drain-source on-resistance RDS(on) 14m Enhancement mode Vth =3.5 to 5.5 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency DC-DC Converters Uninterruptible Power Suppl

 8.5. Size:334K  inchange semiconductor
 irfp470.pdf

isc N-Channel MOSFET Transistor IRFP470 FEATURES With TO-247 packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou