IRFP4768PBF Todos los transistores

 

IRFP4768PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFP4768PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 520 W
   Voltaje máximo drenador - fuente |Vds|: 250 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 93 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 180 nC
   Tiempo de subida (tr): 160 nS
   Conductancia de drenaje-sustrato (Cd): 700 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0175 Ohm
   Paquete / Cubierta: TO247AC

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IRFP4768PBF Datasheet (PDF)

 ..1. Size:329K  international rectifier
irfp4768pbf.pdf

IRFP4768PBF IRFP4768PBF

PD - 97379IRFP4768PbFHEXFET Power MOSFETDApplicationsVDSS250Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 14.5ml High Speed Power SwitchingGmax. 17.5ml Hard Switched and High Frequency CircuitsID 93ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance

 ..2. Size:329K  infineon
irfp4768pbf.pdf

IRFP4768PBF IRFP4768PBF

PD - 97379IRFP4768PbFHEXFET Power MOSFETDApplicationsVDSS250Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 14.5ml High Speed Power SwitchingGmax. 17.5ml Hard Switched and High Frequency CircuitsID 93ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance

 6.1. Size:243K  inchange semiconductor
irfp4768.pdf

IRFP4768PBF IRFP4768PBF

isc N-Channel MOSFET Transistor IRFP4768IIRFP4768FEATURESStatic drain-source on-resistance:RDS(on)17.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Swit

 8.1. Size:103K  international rectifier
irfp4710.pdf

IRFP4768PBF IRFP4768PBF

PD - 94361IRFP4710HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters100V 0.014 72A Motor Control Uninterruptible Power SuppliesBenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-247AC Fully Characterized Avalanche Volta

 8.2. Size:178K  international rectifier
irfp4710pbf.pdf

IRFP4768PBF IRFP4768PBF

PD - 95055IRFP4710PbFHEXFET Power MOSFETAppIicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 0.014 72Al Motor Controll Uninterruptible Power Suppliesl Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-247ACl Fully Charact

 8.3. Size:178K  infineon
irfp4710pbf.pdf

IRFP4768PBF IRFP4768PBF

PD - 95055IRFP4710PbFHEXFET Power MOSFETAppIicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 0.014 72Al Motor Controll Uninterruptible Power Suppliesl Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-247ACl Fully Charact

 8.4. Size:47K  ixys
irfp470.pdf

IRFP4768PBF IRFP4768PBF

IRFP 470 VDSS = 500 VMegaMOSTMFETID (cont) = 24 ARDS(on) = 0.23 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C24 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 96 A

 8.5. Size:243K  inchange semiconductor
irfp4710.pdf

IRFP4768PBF IRFP4768PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4710IIRFP4710FEATURESStatic drain-source on-resistance:RDS(on)14mEnhancement mode:Vth =3.5 to 5.5 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency DC-DC ConvertersUninterruptible Power Suppl

 8.6. Size:334K  inchange semiconductor
irfp470.pdf

IRFP4768PBF IRFP4768PBF

isc N-Channel MOSFET Transistor IRFP470FEATURESWith TO-247 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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