All MOSFET. IRFP4768PBF Datasheet

 

IRFP4768PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP4768PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 520 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 93 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 160 nS

Drain-Source Capacitance (Cd): 700 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0175 Ohm

Package: TO247AC

IRFP4768PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP4768PBF Datasheet (PDF)

1.1. irfp4768pbf.pdf Size:329K _upd-mosfet

IRFP4768PBF
IRFP4768PBF

PD - 97379 IRFP4768PbF HEXFET® Power MOSFET D Applications VDSS 250V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 14.5m Ω l High Speed Power Switching G max. 17.5m Ω l Hard Switched and High Frequency Circuits ID 93A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance

4.1. irfp4710pbf.pdf Size:178K _upd-mosfet

IRFP4768PBF
IRFP4768PBF

PD - 95055 IRFP4710PbF HEXFET® Power MOSFET AppIications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 0.014Ω 72A l Motor Control l Uninterruptible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC l Fully Charact

4.2. irfp4710.pdf Size:103K _international_rectifier

IRFP4768PBF
IRFP4768PBF

PD - 94361 IRFP4710 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014? 72A Motor Control Uninterruptible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC Fully Characterized Avalanche Voltage an

 4.3. irfp470.pdf Size:47K _ixys

IRFP4768PBF
IRFP4768PBF

IRFP 470 VDSS = 500 V MegaMOSTMFET ID (cont) = 24 A Ω RDS(on) = 0.23 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C24 A G = Gate, D = Drain, IDM TC = 25°C, pulse width limited by TJM 96 A

Datasheet: IRFP460LCPBF , IRFP460N , IRFP460NPBF , IRFP460P , IRFP460PBF , IRFP462 , IRFP4668PBF , IRFP4710PBF , 2SK1058 , IRFP4868PBF , IRFP7430PBF , IRFP7530PBF , IRFP7537PBF , IRFP7718PBF , FCA16N60 , FCA16N60_F109 , FCA20N60FS .

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