IRFP9150 Todos los transistores

 

IRFP9150 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP9150

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.15 Ohm

Empaquetado / Estuche: TO247

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IRFP9150 Datasheet (PDF)

1.1. irfp9150.pdf Size:66K _intersil

IRFP9150
IRFP9150

IRFP9150 Data Sheet August 1999 File Number 2293.4 25A, 100V, 0.150 Ohm, P-Channel Power Features MOSFET • 25A, 100V This advanced power MOSFET is designed, tested, and • rDS(ON) = 0.150Ω guaranteed to withstand a specified level of energy in the • Single Pulse Avalanche Energy Rated breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power f

4.1. irfp9140pbf.pdf Size:1478K _upd-mosfet

IRFP9150
IRFP9150

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = - 10 V 0.20 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 61 • Isolated Central Mounting Hole Qgs (nC) 14 • 175 °C Operating Temperature Qgd (nC) 29 • Fast Switching Configuration Single • Ease of

4.2. irfp9140npbf.pdf Size:236K _upd-mosfet

IRFP9150
IRFP9150

PD - 95665 IRFP9140NPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = -100V l P-Channel l Fast Switching RDS(on) = 0.117Ω l Fully Avalanche Rated G l Lead-Free ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

 4.3. irfp9140.pdf Size:165K _international_rectifier

IRFP9150
IRFP9150

4.4. irfp9140pbf.pdf Size:1757K _international_rectifier

IRFP9150
IRFP9150

PD-95991 IRFP9140PbF Lead-Free 12/22/04 Document Number: 91238 www.vishay.com 1 IRFP9140PbF Document Number: 91238 www.vishay.com 2 IRFP9140PbF Document Number: 91238 www.vishay.com 3 IRFP9140PbF Document Number: 91238 www.vishay.com 4 IRFP9140PbF Document Number: 91238 www.vishay.com 5 IRFP9140PbF Document Number: 91238 www.vishay.com 6 IRFP9140PbF Peak Diode Recover

 4.5. irfp9140n.pdf Size:142K _international_rectifier

IRFP9150
IRFP9150

PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature P-Channel RDS(on) = 0.117? Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

4.6. irfp9140-43 irf9540-43.pdf Size:378K _samsung

IRFP9150
IRFP9150



4.7. irfp9130-33 irf9130-33 irf9530-33.pdf Size:520K _samsung

IRFP9150
IRFP9150



4.8. irf9130-33 irfp9130-33 irf9530-33.pdf Size:520K _samsung

IRFP9150
IRFP9150



4.9. irfp9140 sihfp9140.pdf Size:1444K _vishay

IRFP9150
IRFP9150

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of Paralleling S Lead (Pb)-

Otros transistores... IRFP9131 , IRFP9132 , IRFP9133 , IRFP9140 , IRFP9140N , IRFP9141 , IRFP9142 , IRFP9143 , IRFBC40 , IRFP9230 , IRFP9231 , IRFP9232 , IRFP9233 , IRFP9240 , IRFP9241 , IRFP9242 , IRFP9243 .

 

 
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