IRFP9150 Specs and Replacement
Type Designator: IRFP9150
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 850 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO247
IRFP9150 substitution
- MOSFET ⓘ Cross-Reference Search
IRFP9150 datasheet
irfp9150.pdf
IRFP9150 Data Sheet August 1999 File Number 2293.4 25A, 100V, 0.150 Ohm, P-Channel Power Features MOSFET 25A, 100V This advanced power MOSFET is designed, tested, and rDS(ON) = 0.150 guaranteed to withstand a specified level of energy in the Single Pulse Avalanche Energy Rated breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power f... See More ⇒
irfp9140n.pdf
PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature P-Channel RDS(on) = 0.117 Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc... See More ⇒
irfp9140npbf.pdf
PD - 95665 IRFP9140NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = -100V l P-Channel l Fast Switching RDS(on) = 0.117 l Fully Avalanche Rated G l Lead-Free ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re... See More ⇒
Detailed specifications: IRFP9131 , IRFP9132 , IRFP9133 , IRFP9140 , IRFP9140N , IRFP9141 , IRFP9142 , IRFP9143 , IRF2807 , IRFP9230 , IRFP9231 , IRFP9232 , IRFP9233 , IRFP9240 , IRFP9241 , IRFP9242 , IRFP9243 .
Keywords - IRFP9150 MOSFET specs
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