FCB11N60TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCB11N60TM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 98 nS
Cossⓘ - Capacitancia de salida: 671 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Encapsulados: D2-PAK
Búsqueda de reemplazo de FCB11N60TM MOSFET
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FCB11N60TM datasheet
fcb11n60tm.pdf
July 2005 TM SuperFET FCB11N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Farichild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance. Low
fcb11n60ftm.pdf
December 2008 TM SuperFET FCB11N60F 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns ) lower gate charge performance.
fcb110n65f.pdf
April 2015 FCB110N65F N-Channel SuperFET II FRFET MOSFET 650 V, 35 A, 110 m Features Description 700 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC
Otros transistores... FCA16N60, FCA16N60F109, FCA20N60FS, FCA20N60S, FCA20N60SF109, FCAB2126, FCB110N65F, FCB11N60FTM, IRF1404, FCB20N60FTM, FCB20N60TM, FCB290N80, FCB36N60NTM, FCD2250N80Z, FCD3400N80Z, FCD4N60TF, FCD4N60TM
History: UTD413
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