FCB11N60TM Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FCB11N60TM
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 98 ns
Cossⓘ - Выходная емкость: 671 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FCB11N60TM
FCB11N60TM Datasheet (PDF)
fcb11n60tm.pdf

July 2005TMSuperFETFCB11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Farichilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance. Low
fcb11n60ftm.pdf

December 2008 TMSuperFETFCB11N60F 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns ) lower gate charge performance.
fcb11n60.pdf

December 2008 TMSuperFETFCB11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance.
fcb110n65f.pdf

April 2015FCB110N65FN-Channel SuperFET II FRFET MOSFET650 V, 35 A, 110 mFeatures Description 700 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC
Другие MOSFET... FCA16N60 , FCA16N60F109 , FCA20N60FS , FCA20N60S , FCA20N60SF109 , FCAB2126 , FCB110N65F , FCB11N60FTM , IRF1404 , FCB20N60FTM , FCB20N60TM , FCB290N80 , FCB36N60NTM , FCD2250N80Z , FCD3400N80Z , FCD4N60TF , FCD4N60TM .



Список транзисторов
Обновления
MOSFET: JMSL0303TU | JMSL0303TG | JMSL0303AU | JMSL0303AK | JMSL0303AG | JMSL0315AK | JMSL0315AGD | JMSL0315AG | JMSL0310AU | JMSL030STG | JMSL030SPG | JMSL030SAG | JMSL0307AV | JMSL0307AG | JMSH1008PK | JMSH1008PGQ
Popular searches
m3056m mosfet | skd502t mosfet | tip 35 transistor | bu2508df | 2n2222a transistor equivalent | 2sc2509 | 2n1815 | 2sa1103