Справочник MOSFET. FCB11N60TM

 

FCB11N60TM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCB11N60TM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 98 ns
   Cossⓘ - Выходная емкость: 671 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: D2-PAK

 Аналог (замена) для FCB11N60TM

 

 

FCB11N60TM Datasheet (PDF)

 ..1. Size:971K  fairchild semi
 fcb11n60tm.pdf

FCB11N60TM FCB11N60TM

July 2005TMSuperFETFCB11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Farichilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance. Low

 6.1. Size:967K  fairchild semi
 fcb11n60ftm.pdf

FCB11N60TM FCB11N60TM

December 2008 TMSuperFETFCB11N60F 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns ) lower gate charge performance.

 6.2. Size:924K  fairchild semi
 fcb11n60.pdf

FCB11N60TM FCB11N60TM

December 2008 TMSuperFETFCB11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance.

 9.1. Size:695K  fairchild semi
 fcb110n65f.pdf

FCB11N60TM FCB11N60TM

April 2015FCB110N65FN-Channel SuperFET II FRFET MOSFET650 V, 35 A, 110 mFeatures Description 700 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC

 9.2. Size:803K  onsemi
 fcb110n65f.pdf

FCB11N60TM FCB11N60TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:254K  inchange semiconductor
 fcb110n65f.pdf

FCB11N60TM FCB11N60TM

isc N-Channel MOSFET Transistor FCB110N65FFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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