FCD3400N80Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCD3400N80Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.4 nS

Cossⓘ - Capacitancia de salida: 12.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.4 Ohm

Encapsulados: D-PAK

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FCD3400N80Z datasheet

 ..1. Size:810K  fairchild semi
 fcd3400n80z fcu3400n80z.pdf pdf_icon

FCD3400N80Z

March 2015 FCD3400N80Z / FCU3400N80Z N-Channel SuperFET II MOSFET 800 V, 2 A, 3.4 Features Description RDS(on) = 2.75 (Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 7.4 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ.

 ..2. Size:843K  onsemi
 fcd3400n80z fcu3400n80z.pdf pdf_icon

FCD3400N80Z

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FCB110N65F, FCB11N60FTM, FCB11N60TM, FCB20N60FTM, FCB20N60TM, FCB290N80, FCB36N60NTM, FCD2250N80Z, IRFB4227, FCD4N60TF, FCD4N60TM, FCD5N60TMWS, FCH041N60FF085, FCH041N65FF085, FCH070N60E, FCH20N60, FCH47N60F133