FCH070N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCH070N60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 481 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 52 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28 nS
Cossⓘ - Capacitancia de salida: 116 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de MOSFET FCH070N60E
FCH070N60E Datasheet (PDF)
fch070n60e.pdf
April 2015FCH070N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 52 A, 70 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 58 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 128 nC
fch070n60e.pdf
isc N-Channel MOSFET Transistor FCH070N60EFEATURESWith TO-247 packagingDrain Source Voltage-: V 600VDSSStatic drain-source on-resistance:RDS(on) 70m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
fch077n65f f085.pdf
December 2014FCH077N65F_F085N-Channel SuperFET II FRFET MOSFET650 V, 54 A, 77 m DFeatures Typical RDS(on) = 68 m at VGS = 10 V, ID = 27 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 27 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedrawing
fch072n60.pdf
August 2014FCH072N60N-Channel SuperFET II MOSFET600 V, 52 A, 72 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 66 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 95 nC)and lower
fch072n60f.pdf
December 2013FCH072N60FN-Channel SuperFET II FRFET MOSFET600 V, 52 A, 72 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 65 mcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This techno
fch077n65f.pdf
December 2014FCH077N65FN-Channel SuperFET II FRFET MOSFET650 V, 54 A, 77 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 68 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 126 nC
fch072n60f f085.pdf
November 2014FCH072N60F_F085N-Channel SuperFET II FRFET MOSFET600 V, 52 A, 72 m DFeatures Typical RDS(on) = 62 m at VGS = 10 V, ID = 26 A Typical Qg(tot) = 160 nC at VGS = 10V, ID = 26 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedrawing,
fch077n65f-f085.pdf
MOSFET N-Channel,SUPERFET) II, FRFET)650 V, 54 A, 77 mWFCH077N65F-F085DescriptionSuperFET II MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This technology is tailored to minimizeVDS RDS(ON) MAX ID MAXcondu
fch072n60f-f085.pdf
FCH072N60F-F085N-Channel SuperFET II FRFET MOSFET600 V, 52 A, 72 mDFeatures Typical RDS(on) = 62 m at VGS = 10 V, ID = 26 A Typical Qg(tot) = 160 nC at VGS = 10V, ID = 26 A UIS Capability G Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is u
fch072n60f.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fch077n65f.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fch072n60f.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCH072N60FFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918