Справочник MOSFET. FCH070N60E

 

FCH070N60E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FCH070N60E

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 481 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 3.5 V

Максимально допустимый постоянный ток стока (Id): 52 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 128 nC

Время нарастания (tr): 28 ns

Выходная емкость (Cd): 116 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.07 Ohm

Тип корпуса: TO-247

Аналог (замена) для FCH070N60E

 

 

FCH070N60E Datasheet (PDF)

1.1. fch070n60e.pdf Size:1351K _upd-mosfet

FCH070N60E
FCH070N60E

April 2015 FCH070N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 52 A, 70 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 58 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 128 nC

5.1. fch077n65f.pdf Size:1384K _fairchild_semi

FCH070N60E
FCH070N60E

December 2014 FCH077N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 54 A, 77 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 68 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 126 nC

5.2. fch072n60f f085.pdf Size:633K _fairchild_semi

FCH070N60E
FCH070N60E

November 2014 FCH072N60F_F085 N-Channel SuperFET II FRFET MOSFET 600 V, 52 A, 72 mΩ D Features Typical RDS(on) = 62 mΩ at VGS = 10 V, ID = 26 A Typical Qg(tot) = 160 nC at VGS = 10V, ID = 26 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new For current package drawing,

 5.3. fch072n60f.pdf Size:582K _fairchild_semi

FCH070N60E
FCH070N60E

December 2013 FCH072N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 52 A, 72 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 65 mΩ charge balance technology for outstanding low on-resistance and lower gate charge performance. This techno

5.4. fch077n65f f085.pdf Size:695K _fairchild_semi

FCH070N60E
FCH070N60E

December 2014 FCH077N65F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 54 A, 77 mΩ D Features Typical RDS(on) = 68 mΩ at VGS = 10 V, ID = 27 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 27 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new For current package drawing

 5.5. fch072n60.pdf Size:765K _fairchild_semi

FCH070N60E
FCH070N60E

August 2014 FCH072N60 N-Channel SuperFET® II MOSFET 600 V, 52 A, 72 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 66 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 95 nC) and lower

5.6. fch072n60f.pdf Size:212K _inchange_semiconductor

FCH070N60E
FCH070N60E

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCH072N60F ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

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