FCH20N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCH20N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 1280 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de FCH20N60 MOSFET
FCH20N60 Datasheet (PDF)
fch20n60 fca20n60 fca20n60 f109.pdf
December 2008TMSuperFETFCH20N60 / FCA20N60 / FCA20N60_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate cha
fch20n60.pdf
December 2008TMSuperFETFCH20N60 / FCA20N60 / FCA20N60_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate cha
Otros transistores... FCD2250N80Z , FCD3400N80Z , FCD4N60TF , FCD4N60TM , FCD5N60TMWS , FCH041N60FF085 , FCH041N65FF085 , FCH070N60E , IRF630 , FCH47N60F133 , FCI11N60 , FCP20N60FS , FCPF150N65FL1 , FCPF220N80 , FCPF290N80 , FCPF4300N80Z , FCPF7N60T .
History: 2SJ181L | ME7170 | AP3N2R2MT | DTU40N06 | FCH104N60F-F085 | HX2302 | STU339S
History: 2SJ181L | ME7170 | AP3N2R2MT | DTU40N06 | FCH104N60F-F085 | HX2302 | STU339S
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