FCH47N60F133 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCH47N60F133
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 417 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 210 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO-247

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FCH47N60F133 Datasheet (PDF)

5.1. Size:382K fairchild semi
fch47n60f f085.pdf

October 2013FCH47N60F_F085N-Channel MOSFET600V, 47A, 75m DFeatures Typ rDS(on) = 66m at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47AG UIS Capability RoHS CompliantTO-247 Qualified to AEC Q101GSDSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurren

5.2. Size:197K fairchild semi
fch47n60f.pdf

FebruaryTMSuperFETFCH47N60F _F133600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance. Ult

5.3. Size:408K onsemi
fch47n60f.pdf

MOSFET N-Channel,SUPERFET), FRFET)600 V, 47 A, 73 mWFCH47N60FDescriptionSUPERFET MOSFET is ON Semiconductors first generation ofwww.onsemi.comhigh voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailored toVDS RDS(ON) MAX ID MAXminimize conduct

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