FCH47N60F133 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCH47N60F133
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 417 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 47 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 210 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: TO-247
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FCH47N60F133 Datasheet (PDF)
fch47n60f f085.pdf

October 2013FCH47N60F_F085N-Channel MOSFET600V, 47A, 75m DFeatures Typ rDS(on) = 66m at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47AG UIS Capability RoHS CompliantTO-247 Qualified to AEC Q101GSDSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurren
fch47n60f.pdf

FebruaryTMSuperFETFCH47N60F _F133600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance. Ult
fch47n60f.pdf

MOSFET N-Channel,SUPERFET), FRFET)600 V, 47 A, 73 mWFCH47N60FDescriptionSUPERFET MOSFET is ON Semiconductors first generation ofwww.onsemi.comhigh voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailored toVDS RDS(ON) MAX ID MAXminimize conduct
Otros transistores... FCD3400N80Z , FCD4N60TF , FCD4N60TM , FCD5N60TMWS , FCH041N60FF085 , FCH041N65FF085 , FCH070N60E , FCH20N60 , AON7408 , FCI11N60 , FCP20N60FS , FCPF150N65FL1 , FCPF220N80 , FCPF290N80 , FCPF4300N80Z , FCPF7N60T , FCPF7N60YDTU .
 
 
 
 
 
 
 
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