All MOSFET. FCH47N60F133 Datasheet

 

FCH47N60F133 Datasheet and Replacement


   Type Designator: FCH47N60F133
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 270 nC
   tr ⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO-247
 

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FCH47N60F133 Datasheet (PDF)

 5.1. Size:382K  fairchild semi
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FCH47N60F133

October 2013FCH47N60F_F085N-Channel MOSFET600V, 47A, 75m DFeatures Typ rDS(on) = 66m at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47AG UIS Capability RoHS CompliantTO-247 Qualified to AEC Q101GSDSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurren

 5.2. Size:197K  fairchild semi
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FCH47N60F133

FebruaryTMSuperFETFCH47N60F _F133600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance. Ult

 5.3. Size:408K  onsemi
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FCH47N60F133

MOSFET N-Channel,SUPERFET), FRFET)600 V, 47 A, 73 mWFCH47N60FDescriptionSUPERFET MOSFET is ON Semiconductors first generation ofwww.onsemi.comhigh voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailored toVDS RDS(ON) MAX ID MAXminimize conduct

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