FCPF4300N80Z Todos los transistores

 

FCPF4300N80Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCPF4300N80Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 19.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 6.8 nC
   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.3 Ohm
   Paquete / Cubierta: TO-220F
 

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FCPF4300N80Z Datasheet (PDF)

 ..1. Size:649K  fairchild semi
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FCPF4300N80Z

December 2014FCPF4300N80ZN-Channel SuperFET II MOSFET800 V, 1.6 A, 4.3 Features Description RDS(on) = 3.4 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 6.8 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ.

 ..2. Size:685K  onsemi
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FCPF4300N80Z

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:580K  fairchild semi
fcpf400n60.pdf pdf_icon

FCPF4300N80Z

December 2013FCPF400N60N-Channel SuperFET II MOSFET600 V, 10 A, 400 mFeatures Description 650 V @ TJ = 150CSuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 350 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 28 nC)and lo

 9.2. Size:900K  fairchild semi
fcpf400n80zl1.pdf pdf_icon

FCPF4300N80Z

September 2014FCPF400N80ZL1N-Channel SuperFET II MOSFET 800 V, 11 A, 400 mFeatures Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 u

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FCU2250N80Z | 2N7271H4

 

 
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