FCPF4300N80Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCPF4300N80Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 19.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 6.8 nC
   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.3 Ohm
   Paquete / Cubierta: TO-220F

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FCPF4300N80Z Datasheet (PDF)

..1. Size:649K fairchild semi
fcpf4300n80z.pdf

December 2014FCPF4300N80ZN-Channel SuperFET II MOSFET800 V, 1.6 A, 4.3 Features Description RDS(on) = 3.4 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 6.8 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ.

..2. Size:685K onsemi
fcpf4300n80z.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:580K fairchild semi
fcpf400n60.pdf

December 2013FCPF400N60N-Channel SuperFET II MOSFET600 V, 10 A, 400 mFeatures Description 650 V @ TJ = 150CSuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 350 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 28 nC)and lo

9.2. Size:900K fairchild semi
fcpf400n80zl1.pdf

September 2014FCPF400N80ZL1N-Channel SuperFET II MOSFET 800 V, 11 A, 400 mFeatures Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 u

9.3. Size:605K fairchild semi
fcpf400n80z.pdf

November 2014FCPF400N80ZN-Channel SuperFET II MOSFET800 V, 11 A, 400 mFeatures Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 uJ @ 400

9.4. Size:746K onsemi
fcpf400n80zl1.pdf

9.5. Size:659K onsemi
fcpf400n80z.pdf

9.6. Size:221K inchange semiconductor
fcpf400n80zcn.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCPF400N80ZCNFEATURES Drain-source on-resistance:RDS(on) 0.4@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC Power SupplyLED LightingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

9.7. Size:274K inchange semiconductor
fcpf400n60.pdf

isc N-Channel MOSFET Transistor FCPF400N60FEATURESWith TO-220F packagingDrain Source Voltage-: V 600VDSSStatic drain-source on-resistance:RDS(on) 400m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

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