FCPF4300N80Z. Аналоги и основные параметры
Наименование производителя: FCPF4300N80Z
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 19.2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 6.5 ns
Cossⓘ - Выходная емкость: 12 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 4.3 Ohm
Тип корпуса: TO-220F
Аналог (замена) для FCPF4300N80Z
- подборⓘ MOSFET транзистора по параметрам
FCPF4300N80Z даташит
fcpf4300n80z.pdf
December 2014 FCPF4300N80Z N-Channel SuperFET II MOSFET 800 V, 1.6 A, 4.3 Features Description RDS(on) = 3.4 Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 6.8 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ.
fcpf4300n80z.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcpf400n60.pdf
December 2013 FCPF400N60 N-Channel SuperFET II MOSFET 600 V, 10 A, 400 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 350 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 28 nC) and lo
fcpf400n80zl1.pdf
September 2014 FCPF400N80ZL1 N-Channel SuperFET II MOSFET 800 V, 11 A, 400 m Features Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 u
Другие IGBT... FCH070N60E, FCH20N60, FCH47N60F133, FCI11N60, FCP20N60FS, FCPF150N65FL1, FCPF220N80, FCPF290N80, STP75NF75, FCPF7N60T, FCPF7N60YDTU, FCU2250N80Z, FCU3400N80Z, FCU7N60TU, FDA16N50, FDA2712, FDA62N28
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
Popular searches
oc70 transistor | p0603bd mosfet | p157r5nt | ptp03n04n | sm4377 mosfet datasheet | tip31c reemplazo | 2sa906 | c2389 transistor







