FDA16N50 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDA16N50  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 205 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 235 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO-3PN

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FDA16N50 datasheet

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 fda16n50.pdf pdf_icon

FDA16N50

April 2007 TM UniFET FDA16N50 500V N-Channel MOSFET Features Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored to

 ..2. Size:718K  fairchild semi
 fda16n50 f109.pdf pdf_icon

FDA16N50

July 2007 TM UniFET FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET Features Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especial

 0.1. Size:497K  fairchild semi
 fda16n50ldtu.pdf pdf_icon

FDA16N50

August 2014 FDA16N50LDTU N-Channel UniFETTM MOSFET 500 V, 16.5 A, 380 m Features Description RDS(on) = 310 m (Typ.) @ VGS = 10 V, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 20 pF)

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