FDA16N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDA16N50 Datasheet (PDF)

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April 2007 TM UniFET FDA16N50 500V N-Channel MOSFET Features Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored to

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July 2007 TM UniFET FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET Features Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especial

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fda16n50ldtu.pdf pdf_icon

August 2014 FDA16N50LDTU N-Channel UniFETTM MOSFET 500 V, 16.5 A, 380 m Features Description RDS(on) = 310 m (Typ.) @ VGS = 10 V, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 20 pF)

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