FDB2570 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB2570
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 93 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 106 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de FDB2570 MOSFET
- Selecciónⓘ de transistores por parámetros
FDB2570 datasheet
fdb2570.pdf
SMD Type SMD Type SMD Type SMD Type Product specification KDB2570(FDB2570) TO-263 Unit mm Features 22 A, 150 V. RDS(ON) =80 m @VGS =10 V +0.2 4.57-0.2 +0.1 1.27-0.1 RDS(ON) =90m @VGS =6V Low gate charge Fast switching speed +0.1 0.1max 1.27-0.1 High performance trench technology for extremely low RDS(ON) +0.1 0.81-0.1 2.54 1Gate +0.2 2Drain 2.54-0.2 +0.1 +0.2 5.08-0.
fdb2572 fdp2572.pdf
September 2002 FDB2572 / FDP2572 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono
fdb2572.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb2532 f085.pdf
September 2010 FDB2532_F085 N-Channel PowerTrench MOSFET 150V, 79A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rec
Otros transistores... FDA79N15, FDAF59N30, FDAF62N28, FDAF69N25, FDAF75N28, FDB14AN06LA0, FDB20AN06A0, FDB24AN06LA0, AON6380, FDB2670, FDB3672, FDB42AN15A0, FDB44N25TM, FDB52N20TM, FDB5645, FDB5800F085, FDB6021P
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