FDB2570. Аналоги и основные параметры
Наименование производителя: FDB2570
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 93 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 106 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Тип корпуса: TO-263
Аналог (замена) для FDB2570
- подборⓘ MOSFET транзистора по параметрам
FDB2570 даташит
fdb2570.pdf
SMD Type SMD Type SMD Type SMD Type Product specification KDB2570(FDB2570) TO-263 Unit mm Features 22 A, 150 V. RDS(ON) =80 m @VGS =10 V +0.2 4.57-0.2 +0.1 1.27-0.1 RDS(ON) =90m @VGS =6V Low gate charge Fast switching speed +0.1 0.1max 1.27-0.1 High performance trench technology for extremely low RDS(ON) +0.1 0.81-0.1 2.54 1Gate +0.2 2Drain 2.54-0.2 +0.1 +0.2 5.08-0.
fdb2572 fdp2572.pdf
September 2002 FDB2572 / FDP2572 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono
fdb2572.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb2532 f085.pdf
September 2010 FDB2532_F085 N-Channel PowerTrench MOSFET 150V, 79A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rec
Другие IGBT... FDA79N15, FDAF59N30, FDAF62N28, FDAF69N25, FDAF75N28, FDB14AN06LA0, FDB20AN06A0, FDB24AN06LA0, AON6380, FDB2670, FDB3672, FDB42AN15A0, FDB44N25TM, FDB52N20TM, FDB5645, FDB5800F085, FDB6021P
History: IRFP22N60KPBF | IRF7488
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Список транзисторов
Обновления
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
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