FDBL0110N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDBL0110N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 429 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 300 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 170 nC
trⓘ - Tiempo de subida: 61 nS
Cossⓘ - Capacitancia de salida: 3375 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0011 Ohm
Paquete / Cubierta: MO-299A
Búsqueda de reemplazo de FDBL0110N60 MOSFET
FDBL0110N60 Datasheet (PDF)
fdbl0110n60.pdf

March 2015FDBL0110N60N-Channel PowerTrench MOSFET60 V, 300 A, 1.2 m Features Typical RDS(on) = 0.85 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 170 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automation Battery Operated toolsS Battery ProtectionFor current package draw
fdbl0110n60.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdbl0120n40.pdf

November 2014FDBL0120N40N-Channel PowerTrench MOSFET40 V, 240 A, 1.2 m Features Typical RDS(on) = 0.9 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automation Battery Operated toolsS Battery ProtectionForcurrentpackage
fdbl0150n60.pdf

June 2015FDBL0150N60N-Channel PowerTrench MOSFET60 V, 240 A, 1.5 m Features Typical RDS(on) = 1.1 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automation Battery Operated toolsS Battery ProtectionForcurrentpackaged
Otros transistores... FDB7030LL86Z , FDB8132 , FDB8160 , FDB8444TS , FDB86563F085 , FDB8874 , FDB8876 , FDB8878 , 75N75 , FDBL0150N60 , FDBL0150N80 , FDBL0210N80 , FDBL0330N80 , FDBL86363F085 , FDBL86366F085 , FDBL86561F085 , FDBL86563F085 .
History: NCEP12T10F | SIS407ADN | NTS2101PT1 | TMP16N60 | WPM4803 | STB30NM50N
History: NCEP12T10F | SIS407ADN | NTS2101PT1 | TMP16N60 | WPM4803 | STB30NM50N



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