All MOSFET. FDBL0110N60 Datasheet

 

FDBL0110N60 Datasheet and Replacement


   Type Designator: FDBL0110N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 300 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 170 nC
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 3375 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: MO-299A
 

 FDBL0110N60 substitution

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FDBL0110N60 Datasheet (PDF)

 ..1. Size:476K  fairchild semi
 fdbl0110n60.pdf pdf_icon

FDBL0110N60

March 2015FDBL0110N60N-Channel PowerTrench MOSFET60 V, 300 A, 1.2 m Features Typical RDS(on) = 0.85 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 170 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automation Battery Operated toolsS Battery ProtectionFor current package draw

 ..2. Size:427K  onsemi
 fdbl0110n60.pdf pdf_icon

FDBL0110N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:488K  fairchild semi
 fdbl0120n40.pdf pdf_icon

FDBL0110N60

November 2014FDBL0120N40N-Channel PowerTrench MOSFET40 V, 240 A, 1.2 m Features Typical RDS(on) = 0.9 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automation Battery Operated toolsS Battery ProtectionForcurrentpackage

 8.2. Size:446K  fairchild semi
 fdbl0150n60.pdf pdf_icon

FDBL0110N60

June 2015FDBL0150N60N-Channel PowerTrench MOSFET60 V, 240 A, 1.5 m Features Typical RDS(on) = 1.1 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automation Battery Operated toolsS Battery ProtectionForcurrentpackaged

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 10N60L-TF3-T

Keywords - FDBL0110N60 MOSFET datasheet

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