FDBL0210N80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDBL0210N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 357 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 240 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 63 nS

Cossⓘ - Capacitancia de salida: 1540 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: MO-299A

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FDBL0210N80 datasheet

 ..1. Size:379K  fairchild semi
 fdbl0210n80.pdf pdf_icon

FDBL0210N80

April 2015 FDBL0210N80 N-Channel PowerTrench MOSFET 80 V, 240 A, 2.0 m Features Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 A D UIS Capability RoHS Compliant Applications Industrial Motor Drive G Industrial Power Supply Industrial Automations Battery Operated tools S Battery Protection For current package d

 8.1. Size:520K  onsemi
 fdbl0240n100.pdf pdf_icon

FDBL0210N80

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.2. Size:626K  onsemi
 fdbl0260n100.pdf pdf_icon

FDBL0210N80

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:561K  onsemi
 fdbl0200n100.pdf pdf_icon

FDBL0210N80

MOSFET N-Channel, POWERTRENCH) 100 V, 300 A, 2.0 mW FDBL0200N100 Features www.onsemi.com Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 95 nC at VGS = 10 V, ID = 80 A VDSS RDS(ON) MAX ID MAX UIS Capability 100 V 2.0 mW @ 10 V 300 A This Device is Pb-Free and is RoHS Compliant Applications Industrial Motor Drive Industrial Power Supp

MOSTRAR MÁS

Otros transistores... FDB8444TS, FDB86563F085, FDB8874, FDB8876, FDB8878, FDBL0110N60, FDBL0150N60, FDBL0150N80, IRF2807, FDBL0330N80, FDBL86363F085, FDBL86366F085, FDBL86561F085, FDBL86563F085, FDC2512F095, FDC3512F095, FDC3612F095