FDBL0210N80 Todos los transistores

 

FDBL0210N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDBL0210N80
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 357 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 240 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 63 nS
   Cossⓘ - Capacitancia de salida: 1540 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: MO-299A
 

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FDBL0210N80 Datasheet (PDF)

 ..1. Size:379K  fairchild semi
fdbl0210n80.pdf pdf_icon

FDBL0210N80

April 2015FDBL0210N80N-Channel PowerTrench MOSFET80 V, 240 A, 2.0 m Features Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automations Battery Operated toolsS Battery ProtectionForcurrentpackaged

 8.1. Size:520K  onsemi
fdbl0240n100.pdf pdf_icon

FDBL0210N80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.2. Size:626K  onsemi
fdbl0260n100.pdf pdf_icon

FDBL0210N80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:561K  onsemi
fdbl0200n100.pdf pdf_icon

FDBL0210N80

MOSFET N-Channel,POWERTRENCH)100 V, 300 A, 2.0 mWFDBL0200N100Featureswww.onsemi.com Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 95 nC at VGS = 10 V, ID = 80 AVDSS RDS(ON) MAX ID MAX UIS Capability100 V 2.0 mW @ 10 V 300 A This Device is Pb-Free and is RoHS CompliantApplications Industrial Motor Drive Industrial Power Supp

Otros transistores... FDB8444TS , FDB86563F085 , FDB8874 , FDB8876 , FDB8878 , FDBL0110N60 , FDBL0150N60 , FDBL0150N80 , IRFB31N20D , FDBL0330N80 , FDBL86363F085 , FDBL86366F085 , FDBL86561F085 , FDBL86563F085 , FDC2512F095 , FDC3512F095 , FDC3612F095 .

History: WNM3025 | FDB86366-F085 | RU30S15H | SSP60R070S2E | IRF7307PBF | IRLZ44S | SSB65R090S2

 

 
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