FDBL0210N80. Аналоги и основные параметры
Наименование производителя: FDBL0210N80
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 357 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 240 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 63 ns
Cossⓘ - Выходная емкость: 1540 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
Тип корпуса: MO-299A
Аналог (замена) для FDBL0210N80
- подборⓘ MOSFET транзистора по параметрам
FDBL0210N80 даташит
fdbl0210n80.pdf
April 2015 FDBL0210N80 N-Channel PowerTrench MOSFET 80 V, 240 A, 2.0 m Features Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 A D UIS Capability RoHS Compliant Applications Industrial Motor Drive G Industrial Power Supply Industrial Automations Battery Operated tools S Battery Protection For current package d
fdbl0240n100.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdbl0260n100.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdbl0200n100.pdf
MOSFET N-Channel, POWERTRENCH) 100 V, 300 A, 2.0 mW FDBL0200N100 Features www.onsemi.com Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 95 nC at VGS = 10 V, ID = 80 A VDSS RDS(ON) MAX ID MAX UIS Capability 100 V 2.0 mW @ 10 V 300 A This Device is Pb-Free and is RoHS Compliant Applications Industrial Motor Drive Industrial Power Supp
Другие IGBT... FDB8444TS, FDB86563F085, FDB8874, FDB8876, FDB8878, FDBL0110N60, FDBL0150N60, FDBL0150N80, IRF2807, FDBL0330N80, FDBL86363F085, FDBL86366F085, FDBL86561F085, FDBL86563F085, FDC2512F095, FDC3512F095, FDC3612F095
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH | AP3P020H | AP3N9R5YT | AP3N9R5MT | AP3N5R0MT | AP2P053Y | AP12A390YT | AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085
Popular searches
c945 transistor | irf640n | 2n3904 | bc547 datasheet | k3797 mosfet | bs170 datasheet | tip41c | irfp460




