FDC2512F095 Todos los transistores

 7.1. Size:242K  fairchild semi
 fdc2512.pdf

October 2009 FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.4 A, 150 V. RDS(ON) = 425 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 475 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

 7.2. Size:238K  fairchild semi
 fdc2512 f095.pdf

October 2009 FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.4 A, 150 V. RDS(ON) = 425 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 475 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

 7.3. Size:578K  onsemi
 fdc2512.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.4. Size:284K  kexin
 fdc2512-hf.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET FDC2512-HF ( ) SOT-23-6 +0.1 0.4 -0.1 Features VDS (V) = 150V 6 5 4 ID = 1.4A (VGS = 10V) RDS(ON) 425m (VGS = 10V) RDS(ON) 475m (VGS = 6V) 2 3 1 +0.01 -0.01 +0.2 -0.1 D D D D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 150 V

 7.5. Size:2033K  kexin
 fdc2512.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET FDC2512 (KDC2512) ( ) SOT-23-6 Unit mm +0.1 0.4 -0.1 Features VDS (V) = 150V 6 5 4 ID = 1.4A (VGS = 10V) RDS(ON) 425m (VGS = 10V) RDS(ON) 475m (VGS = 6V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 1 6 D D D 2 5 D G 3 4 S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

 7.6. Size:2616K  cn vbsemi
 fdc2512.pdf

FDC2512 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.095 at VGS = 10 V 3.2 Low On-Resistance 100 4.2 nC 0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS D