Справочник MOSFET. FDC2512F095

 

FDC2512F095 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDC2512F095
   Маркировка: ..252
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3.5 ns
   Cossⓘ - Выходная емкость: 22 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.425 Ohm
   Тип корпуса: SSOT-6

 Аналог (замена) для FDC2512F095

 

 

FDC2512F095 Datasheet (PDF)

 7.1. Size:242K  fairchild semi
 fdc2512.pdf

FDC2512F095 FDC2512F095

October 2009 FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.4 A, 150 V. RDS(ON) = 425 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 475 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

 7.2. Size:238K  fairchild semi
 fdc2512 f095.pdf

FDC2512F095 FDC2512F095

October 2009 FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.4 A, 150 V. RDS(ON) = 425 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 475 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

 7.3. Size:578K  onsemi
 fdc2512.pdf

FDC2512F095 FDC2512F095

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.4. Size:284K  kexin
 fdc2512-hf.pdf

FDC2512F095 FDC2512F095

SMD Type MOSFETN-Channel Enhancement MOSFET FDC2512-HF( )SOT-23-6 +0.10.4 -0.1 Features VDS (V) = 150V6 5 4 ID = 1.4A (VGS = 10V) RDS(ON) 425m (VGS = 10V) RDS(ON) 475m (VGS = 6V)2 31 +0.01-0.01+0.2-0.1 D DD DG S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 150V

 7.5. Size:2033K  kexin
 fdc2512.pdf

FDC2512F095 FDC2512F095

SMD Type MOSFETN-Channel Enhancement MOSFET FDC2512 (KDC2512)( )SOT-23-6 Unit: mm+0.10.4 -0.1 Features VDS (V) = 150V6 5 4 ID = 1.4A (VGS = 10V) RDS(ON) 425m (VGS = 10V) RDS(ON) 475m (VGS = 6V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.11 6D DD 2 5DG 3 4S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

 7.6. Size:2616K  cn vbsemi
 fdc2512.pdf

FDC2512F095 FDC2512F095

FDC2512www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS D

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