FDC3612F095 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDC3612F095 Datasheet (PDF)

7.1. Size:134K fairchild semi
fdc3612.pdf pdf_icon

February 2002 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

7.2. Size:174K fairchild semi
fdc3612 f095.pdf pdf_icon

November 2011 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

7.3. Size:418K onsemi
fdc3612.pdf pdf_icon

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

7.4. Size:1684K kexin
fdc3612-hf.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFETFDC3612-HF( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V)2 31 Fast switching speed +0.020.15 -0.02+0.01-0.01+0.2-0.11 61.Drain 4.Source2 5 2.Drain 5.Drain3.Gate 6.Drain3 4 Absolute Maximum Ra