FDC3612F095. Аналоги и основные параметры
Наименование производителя: FDC3612F095
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.6 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 3.5 ns
Cossⓘ - Выходная емкость: 55 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
Тип корпуса: SSOT-6
Аналог (замена) для FDC3612F095
- подборⓘ MOSFET транзистора по параметрам
FDC3612F095 даташит
fdc3612.pdf
February 2002 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized
fdc3612 f095.pdf
November 2011 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized
fdc3612.pdf
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fdc3612-hf.pdf
SMD Type MOSFET N-Channel MOSFET FDC3612-HF ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V) 2 3 1 Fast switching speed +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 1 6 1.Drain 4.Source 2 5 2.Drain 5.Drain 3.Gate 6.Drain 3 4 Absolute Maximum Ra
Другие IGBT... FDBL0210N80, FDBL0330N80, FDBL86363F085, FDBL86366F085, FDBL86561F085, FDBL86563F085, FDC2512F095, FDC3512F095, IRFB31N20D, FDC3616N, FDC5612F095, FDC6020C, FDC602PF095, FDC633NF095, FDC640PF095, FDC645NF095, FDC697P
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