FDC3616N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

January 2004 FDC3616N 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.7 A, 100 V. RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hi

February 2002 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

November 2011 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

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SMD Type MOSFETN-Channel MOSFETFDC3612-HF( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V)2 31 Fast switching speed +0.020.15 -0.02+0.01-0.01+0.2-0.11 61.Drain 4.Source2 5 2.Drain 5.Drain3.Gate 6.Drain3 4 Absolute Maximum Ra

SMD Type MOSFETN-Channel MOSFETFDC3612 (KDC3612)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V)2 31 Fast switching speed +0.020.15 -0.02+0.01-0.01+0.2-0.11 61.Drain 4.Source2 5 2.Drain 5.Drain3.Gate 6.Drain3 4 Absolute Max