Справочник MOSFET. FDC3616N

 

FDC3616N Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDC3616N
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 72 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: SSOT-6
 

 Аналог (замена) для FDC3616N

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDC3616N Datasheet (PDF)

 ..1. Size:171K  fairchild semi
 fdc3616n.pdf pdf_icon

FDC3616N

January 2004 FDC3616N 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.7 A, 100 V. RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hi

 8.1. Size:134K  fairchild semi
 fdc3612.pdf pdf_icon

FDC3616N

February 2002 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

 8.2. Size:174K  fairchild semi
 fdc3612 f095.pdf pdf_icon

FDC3616N

November 2011 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

 8.3. Size:418K  onsemi
 fdc3612.pdf pdf_icon

FDC3616N

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FDBL0330N80 , FDBL86363F085 , FDBL86366F085 , FDBL86561F085 , FDBL86563F085 , FDC2512F095 , FDC3512F095 , FDC3612F095 , IRFZ48N , FDC5612F095 , FDC6020C , FDC602PF095 , FDC633NF095 , FDC640PF095 , FDC645NF095 , FDC697P , FDC697PF077 .

 

 
Back to Top

 


 
.