FDC3616N. Аналоги и основные параметры
Наименование производителя: FDC3616N
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 72 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
Тип корпуса: SSOT-6
Аналог (замена) для FDC3616N
- подборⓘ MOSFET транзистора по параметрам
FDC3616N даташит
fdc3616n.pdf
January 2004 FDC3616N 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.7 A, 100 V. RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hi
fdc3612.pdf
February 2002 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized
fdc3612 f095.pdf
November 2011 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized
fdc3612.pdf
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