FDC633NF095 Todos los transistores

 7.1. Size:61K  fairchild semi
 fdc633n f095.pdf

March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect 5.2 A, 30 V. RDS(ON) = 0.042 @ VGS = 4.5 V transistors is produced using Fairchild's proprietary, high cell RDS(ON) = 0.054 @ VGS = 2.5 V. density, DMOS technology. This very high density process is tailored to minimize on-stat

 8.1. Size:98K  fairchild semi
 fdc6333c.pdf

October 2001 FDC6333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Q1 2.5 A, 30V. RDS(ON) = 95 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 150 m @ VGS = 4.5 V process that has been especially tailored to minimize on-state resistance and yet maintain superior Q2 2

 8.2. Size:212K  onsemi
 fdc6333c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur