FDC633NF095 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

March 1998 FDC633N N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel enhancement mode power field effect5.2 A, 30 V. RDS(ON) = 0.042 @ VGS = 4.5 Vtransistors is produced using Fairchild's proprietary, high cellRDS(ON) = 0.054 @ VGS = 2.5 V.density, DMOS technology. This very high density process istailored to minimize on-stat

October 2001FDC6333C30V N & P-Channel PowerTrench MOSFETsGeneral Description FeaturesThese N & P-Channel MOSFETs are produced using Q1 2.5 A, 30V. RDS(ON) = 95 m @ VGS = 10 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 150 m @ VGS = 4.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2 2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur