FDC633NF095
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDC633NF095
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 5.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 226
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042
Ohm
Package:
SSOT-6
FDC633NF095
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDC633NF095
Datasheet (PDF)
7.1. Size:61K fairchild semi
fdc633n f095.pdf
March 1998 FDC633N N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel enhancement mode power field effect5.2 A, 30 V. RDS(ON) = 0.042 @ VGS = 4.5 Vtransistors is produced using Fairchild's proprietary, high cellRDS(ON) = 0.054 @ VGS = 2.5 V.density, DMOS technology. This very high density process istailored to minimize on-stat
8.1. Size:98K fairchild semi
fdc6333c.pdf
October 2001FDC6333C30V N & P-Channel PowerTrench MOSFETsGeneral Description FeaturesThese N & P-Channel MOSFETs are produced using Q1 2.5 A, 30V. RDS(ON) = 95 m @ VGS = 10 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 150 m @ VGS = 4.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2 2
8.2. Size:212K onsemi
fdc6333c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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