FDD10N20LZTM Todos los transistores

 ..1. Size:230K  fairchild semi
 fdd10n20lz fdd10n20lztm.pdf

December 2010 TM UniFET FDD10N20LZ N-Channel MOSFET 200V Logic, 7.6A, 0.36 Features Description RDS(on) = 0.30 ( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS Low Gate Charge ( Typ.12nC) technology. Low Crss ( Typ.11pF) This advance technology h

 4.1. Size:716K  onsemi
 fdd10n20lz.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.2. Size:315K  inchange semiconductor
 fdd10n20lz.pdf

isc N-Channel MOSFET Transistor FDD10N20LZ FEATURES Drain Current I =7.6A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R =0.36 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 9.1. Size:222K  fairchild semi
 fdd107an06la0.pdf

January 2004 FDD107AN06LA0 N-Channel PowerTrench MOSFET 60V, 10A, 107m Features Applications rDS(ON) = 92m (Typ.), VGS = 5V, ID = 10A Motor / Body Load Control Qg(tot) = 4.2nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c

 9.2. Size:236K  fairchild semi
 fdd10an06a0.pdf

August 2002 FDD10AN06A0 N-Channel PowerTrench MOSFET 60V, 50A, 10.5m Features Applications rDS(ON) = 9.4m (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 28nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c

 9.3. Size:384K  fairchild semi
 fdd10an06 f085.pdf

Dec 2012 FDD10AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 50A, 10.5m Features Applications rDS(ON) = 9.4m (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 28nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC

 9.4. Size:500K  onsemi
 fdd10an06a0 f085.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.5. Size:315K  inchange semiconductor
 fdd107an06la0.pdf

isc N-Channel MOSFET Transistor FDD107AN06LA0 FEATURES Drain Current I =10.9A@ T =25 D C Drain Source Voltage V =60V(Min) DSS Static Drain-Source On-Resistance R =91m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol