FDD10N20LZTM PDF and Equivalents Search

 

FDD10N20LZTM Specs and Replacement


   Type Designator: FDD10N20LZTM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: D-PAK
 

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FDD10N20LZTM datasheet

 ..1. Size:230K  fairchild semi
fdd10n20lz fdd10n20lztm.pdf pdf_icon

FDD10N20LZTM

December 2010 TM UniFET FDD10N20LZ N-Channel MOSFET 200V Logic, 7.6A, 0.36 Features Description RDS(on) = 0.30 ( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS Low Gate Charge ( Typ.12nC) technology. Low Crss ( Typ.11pF) This advance technology h... See More ⇒

 4.1. Size:716K  onsemi
fdd10n20lz.pdf pdf_icon

FDD10N20LZTM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 4.2. Size:315K  inchange semiconductor
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FDD10N20LZTM

isc N-Channel MOSFET Transistor FDD10N20LZ FEATURES Drain Current I =7.6A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R =0.36 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 9.1. Size:222K  fairchild semi
fdd107an06la0.pdf pdf_icon

FDD10N20LZTM

January 2004 FDD107AN06LA0 N-Channel PowerTrench MOSFET 60V, 10A, 107m Features Applications rDS(ON) = 92m (Typ.), VGS = 5V, ID = 10A Motor / Body Load Control Qg(tot) = 4.2nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c... See More ⇒

Detailed specifications: FDC697PF077 , FDC699P , FDC699PF077 , FDC796N , FDC796NF077 , FDD044AN03L , FDD068AN03L , FDD107AN06LA0 , 60N06 , FDD14AN06LA0 , FDD16AN08A0NF054 , FDD20AN06A0 , FDD24AN06LA0 , FDD2512 , FDD2570 , FDD2612 , FDD26AN06A0 .

Keywords - FDD10N20LZTM MOSFET specs

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