FDD10N20LZTM Specs and Replacement
Type Designator: FDD10N20LZTM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: D-PAK
FDD10N20LZTM substitution
FDD10N20LZTM datasheet
fdd10n20lz fdd10n20lztm.pdf
December 2010 TM UniFET FDD10N20LZ N-Channel MOSFET 200V Logic, 7.6A, 0.36 Features Description RDS(on) = 0.30 ( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS Low Gate Charge ( Typ.12nC) technology. Low Crss ( Typ.11pF) This advance technology h... See More ⇒
fdd10n20lz.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fdd10n20lz.pdf
isc N-Channel MOSFET Transistor FDD10N20LZ FEATURES Drain Current I =7.6A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R =0.36 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
fdd107an06la0.pdf
January 2004 FDD107AN06LA0 N-Channel PowerTrench MOSFET 60V, 10A, 107m Features Applications rDS(ON) = 92m (Typ.), VGS = 5V, ID = 10A Motor / Body Load Control Qg(tot) = 4.2nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c... See More ⇒
Detailed specifications: FDC697PF077 , FDC699P , FDC699PF077 , FDC796N , FDC796NF077 , FDD044AN03L , FDD068AN03L , FDD107AN06LA0 , 60N06 , FDD14AN06LA0 , FDD16AN08A0NF054 , FDD20AN06A0 , FDD24AN06LA0 , FDD2512 , FDD2570 , FDD2612 , FDD26AN06A0 .
Keywords - FDD10N20LZTM MOSFET specs
FDD10N20LZTM cross reference
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FDD10N20LZTM substitution
FDD10N20LZTM replacement
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