All MOSFET. FDD10N20LZTM Datasheet

 

FDD10N20LZTM MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD10N20LZTM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 7.6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 75 pF

Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm

Package: D-PAK

FDD10N20LZTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD10N20LZTM Datasheet (PDF)

1.1. fdd10n20lz fdd10n20lztm.pdf Size:230K _fairchild_semi

FDD10N20LZTM
FDD10N20LZTM

December 2010 TM UniFET FDD10N20LZ N-Channel MOSFET 200V Logic, 7.6A, 0.36 Features Description • RDS(on) = 0.30( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS • Low Gate Charge ( Typ.12nC) technology. • Low Crss ( Typ.11pF) This advance technology h

5.1. fdd10an06 f085.pdf Size:384K _fairchild_semi

FDD10N20LZTM
FDD10N20LZTM

Dec 2012 FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features Applications • rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Motor / Body Load Control • Qg(tot) = 28nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management • Low Qrr Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC

5.2. fdd107an06la0.pdf Size:222K _fairchild_semi

FDD10N20LZTM
FDD10N20LZTM

January 2004 FDD107AN06LA0 N-Channel PowerTrench® MOSFET 60V, 10A, 107mΩ Features Applications • rDS(ON) = 92mΩ (Typ.), VGS = 5V, ID = 10A • Motor / Body Load Control • Qg(tot) = 4.2nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC c

 5.3. fdd10an06a0.pdf Size:236K _fairchild_semi

FDD10N20LZTM
FDD10N20LZTM

August 2002 FDD10AN06A0 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features Applications • rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Motor / Body Load Control • Qg(tot) = 28nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management • Low Qrr Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC c

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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