FDD2612 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD2612  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.9 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 18 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.72 Ohm

Encapsulados: TO-252

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FDD2612 datasheet

 ..1. Size:108K  fairchild semi
 fdd2612.pdf pdf_icon

FDD2612

August 2001 FDD2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.9 A, 200 V. RDS(ON) = 720 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has be

 9.1. Size:606K  fairchild semi
 fdd26an06a0.pdf pdf_icon

FDD2612

August 2004 FDD26AN06A0 N-Channel PowerTrench MOSFET 60V, 36A, 26m Features Applications rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A Motor / Body Load Control Qg(tot) = 13nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conv

 9.2. Size:871K  fairchild semi
 fdd26an06 f085.pdf pdf_icon

FDD2612

Aug 2011 FDD26AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 36A, 26m Applications Features Motor / Body Load Control rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A ABS Systems Qg(tot) = 13nC (Typ.), VGS = 10V Powertrain Management Low Miller Charge Injection Systems Low QRR Body Diode DC-DC converters and Off-line UPS UIS Capability (Si

 9.3. Size:95K  fairchild semi
 fdd2670.pdf pdf_icon

FDD2612

November 2001 FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge switching PWM controllers. Fast switching speed These MOSFETs

MOSTRAR MÁS

Otros transistores... FDD107AN06LA0, FDD10N20LZTM, FDD14AN06LA0, FDD16AN08A0NF054, FDD20AN06A0, FDD24AN06LA0, FDD2512, FDD2570, IRF740, FDD26AN06A0, FDD3570, FDD3N50NZTM, FDD45AN06LA0, FDD45AN06LA0F085, FDD5810, FDD5N60NZTM, FDD6512A