FDD2612 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD2612

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 42 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 4.9 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Tiempo de elevación (tr): 6 nS

Conductancia de drenaje-sustrato (Cd): 18 pF

Resistencia drenaje-fuente RDS(on): 0.72 Ohm

Empaquetado / Estuche: TO-252

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FDD2612 Datasheet (PDF)

1.1. fdd2612.pdf Size:108K _upd-mosfet

August 2001 FDD2612    200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • High performance trench technology for extremely switching PWM controllers. It has be

5.1. fdd26an06a0.pdf Size:606K _upd-mosfet

August 2004 FDD26AN06A0 N-Channel PowerTrench® MOSFET 60V, 36A, 26mΩ Features Applications • rDS(ON) = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC conv

5.2. fdd26an06 f085.pdf Size:871K _fairchild_semi

Aug 2011 FDD26AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 36A, 26mΩ Applications Features • Motor / Body Load Control • rDS(ON) = 20mΩ (Typ.), VGS = 10V, ID = 36A • ABS Systems • Qg(tot) = 13nC (Typ.), VGS = 10V • Powertrain Management • Low Miller Charge • Injection Systems • Low QRR Body Diode • DC-DC converters and Off-line UPS • UIS Capability (Si

5.3. fdd2670.pdf Size:95K _fairchild_semi

November 2001 FDD2670 ? ? ? 200V N-Channel PowerTrench? MOSFET General Description Features This N-Channel MOSFET has been designed � 3.6 A, 200 V. RDS(ON) = 130 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional � Low gate charge switching PWM controllers. � Fast switching speed These MOSFETs feature faster swi

Otros transistores... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

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