FDD6512A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD6512A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 43 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 277 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Encapsulados: D-PAK
Búsqueda de reemplazo de FDD6512A MOSFET
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FDD6512A datasheet
fdd6512a fdu6512a.pdf
November 2001 FDD6512A/FDU6512A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 36 A, 20 V RDS(ON) = 21 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 31 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for
fdd6512a.pdf
isc N-Channel MOSFET Transistor FDD6512A FEATURES Drain Current I =34A@ T =25 D C Drain Source Voltage V =20V(Min) DSS Static Drain-Source On-Resistance R =21m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
fdd6530a.pdf
July 2001 FDD6530A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 20 V RDS(ON) = 32 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 47 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate char
fdd6530a.pdf
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Otros transistores... FDD2612, FDD26AN06A0, FDD3570, FDD3N50NZTM, FDD45AN06LA0, FDD45AN06LA0F085, FDD5810, FDD5N60NZTM, IRF1404, FDD6606, FDD6632, FDD6670AL, FDD6670AS, FDD6672A, FDD6676AS, FDD6682, FDD6688S
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