Справочник MOSFET. FDD6512A

 

FDD6512A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDD6512A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 43 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 277 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: D-PAK

 Аналог (замена) для FDD6512A

 

 

FDD6512A Datasheet (PDF)

 ..1. Size:68K  fairchild semi
 fdd6512a fdu6512a.pdf

FDD6512A FDD6512A

November 2001FDD6512A/FDU6512A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 36 A, 20 V RDS(ON) = 21 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 31 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for

 ..2. Size:307K  inchange semiconductor
 fdd6512a.pdf

FDD6512A FDD6512A

isc N-Channel MOSFET Transistor FDD6512AFEATURESDrain Current : I =34A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =21m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 9.1. Size:82K  fairchild semi
 fdd6530a.pdf

FDD6512A FDD6512A

July 2001FDD6530A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 21 A, 20 V RDS(ON) = 32 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 47 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate char

 9.2. Size:337K  onsemi
 fdd6530a.pdf

FDD6512A FDD6512A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:308K  inchange semiconductor
 fdd6530a.pdf

FDD6512A FDD6512A

isc N-Channel MOSFET Transistor FDD6530AFEATURESDrain Current : I =21A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =32m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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