FDD6696 Todos los transistores

 ..1. Size:106K  fairchild semi
 fdd6696.pdf

December 2002 FDD6696/FDU6696 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 50A, 30 V R = 8.0 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 10.7 m @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low

 ..2. Size:288K  inchange semiconductor
 fdd6696.pdf

isc N-Channel MOSFET Transistor FDD6696 FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dri

 8.1. Size:117K  fairchild semi
 fdd6690a.pdf

July 2003 FDD6690A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 12 m @ VGS = 10 V Semiconductor s advanced PowerTrench process that RDS(ON) = 14 m @ VGS = 4.5 V has been especially tailored to minimize the on state resistance and yet maintain low gate charge for Low gate charge su

 8.2. Size:83K  fairchild semi
 fdd6692 fdu6692.pdf

April 2001 FDD6692/FDU6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 54 A, 30 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optim

 8.3. Size:287K  inchange semiconductor
 fdd6692.pdf

isc N-Channel MOSFET Transistor FDD6692 FEATURES Drain Current I =54A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.4. Size:287K  inchange semiconductor
 fdd6690a.pdf

isc N-Channel MOSFET Transistor FDD6690A FEATURES Drain Current I =46A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d