Справочник MOSFET. FDD6696

 

FDD6696 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDD6696
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 52 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 410 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для FDD6696

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDD6696 Datasheet (PDF)

 ..1. Size:106K  fairchild semi
fdd6696.pdfpdf_icon

FDD6696

December 2002FDD6696/FDU669630V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 50A, 30 V R = 8.0 m @ V = 10 VDS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 10.7 m @ V = 4.5 VDS(ON) GSconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low

 ..2. Size:288K  inchange semiconductor
fdd6696.pdfpdf_icon

FDD6696

isc N-Channel MOSFET Transistor FDD6696FEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri

 8.1. Size:117K  fairchild semi
fdd6690a.pdfpdf_icon

FDD6696

July 2003FDD6690A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 12 m @ VGS = 10 VSemiconductors advanced PowerTrench process that RDS(ON) = 14 m @ VGS = 4.5 Vhas been especially tailored to minimize the on stateresistance and yet maintain low gate charge for Low gate chargesu

 8.2. Size:83K  fairchild semi
fdd6692 fdu6692.pdfpdf_icon

FDD6696

April 2001 FDD6692/FDU6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 54 A, 30 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optim

Другие MOSFET... FDD6606 , FDD6632 , FDD6670AL , FDD6670AS , FDD6672A , FDD6676AS , FDD6682 , FDD6688S , IRFB4110 , FDD6776A , FDD6780 , FDD6782A , FDD6796 , FDD6N20TF , FDD6N50TF , FDD6N50TM , FDD7030BL .

History: JCS5N50VT | IRFB7446G

 

 
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