FDD6796 Todos los transistores

 

FDD6796 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD6796
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 325 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

FDD6796 Datasheet (PDF)

 ..1. Size:296K  fairchild semi
fdd6796.pdf pdf_icon

FDD6796

June 2009FDD6796N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 9.0 m at VGS = 4.5 V, ID = 15.5 Asynchronous or conventional switching PWM controllers. It has b

 ..2. Size:287K  inchange semiconductor
fdd6796.pdf pdf_icon

FDD6796

isc N-Channel MOSFET Transistor FDD6796FEATURESDrain Current : I =40A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 0.1. Size:319K  fairchild semi
fdd6796a fdu6796a f071.pdf pdf_icon

FDD6796

March 2009FDD6796A / FDU6796A_F071N-Channel PowerTrench MOSFET 25 V, 5.7 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 15.0 m at VGS = 4.5 V, ID = 15.2 Asynchronous or conventional switching PWM controller

 0.2. Size:287K  inchange semiconductor
fdd6796a.pdf pdf_icon

FDD6796

isc N-Channel MOSFET Transistor FDD6796AFEATURESDrain Current : I =40A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRLI3803PBF | NCE80H12

 

 
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