FDD6796 PDF and Equivalents Search

June 2009 FDD6796 N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 9.0 m at VGS = 4.5 V, ID = 15.5 A synchronous or conventional switching PWM controllers. It has b... See More ⇒

isc N-Channel MOSFET Transistor FDD6796 FEATURES Drain Current I =40A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

March 2009 FDD6796A / FDU6796A_F071 N-Channel PowerTrench MOSFET 25 V, 5.7 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 15.0 m at VGS = 4.5 V, ID = 15.2 A synchronous or conventional switching PWM controller... See More ⇒

isc N-Channel MOSFET Transistor FDD6796A FEATURES Drain Current I =40A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

January 2009 FDD6780A / FDU6780A_F071 N-Channel PowerTrench MOSFET 25 V, 8.6 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.6 m at VGS = 10 V, ID = 16.4 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 19.0 m at VGS = 4.5 V, ID = 12.2 A synchronous or conventional switching PWM contro... See More ⇒

January 2009 FDD6770A N-Channel PowerTrench MOSFET 25 V, 4.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.0 m at VGS = 10 V, ID = 24 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 8.0 m at VGS = 4.5 V, ID = 18.4 A synchronous or conventional switching PWM controllers. It has bee... See More ⇒

January 2009 FDD6760A N-Channel PowerTrench MOSFET 25 V, 3.2 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.2 m at VGS = 10 V, ID = 27 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 21 A synchronous or conventional switching PWM controllers. It has been ... See More ⇒

June 2009 FDD6780 N-Channel PowerTrench MOSFET 25 V, 30 A, 8.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.5 m at VGS = 10 V, ID = 16.5 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 13.0 A synchronous or conventional switching PWM controllers. It has ... See More ⇒

January 2009 FDD6776A / FDU6776A_F071 N-Channel PowerTrench MOSFET 25 V, 7.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 17.7 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 17.0m at VGS = 4.5 V, ID = 13.2 A synchronous or conventional switching PWM control... See More ⇒

January 2009 FDD6782A N-Channel PowerTrench MOSFET 25 V, 10.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 10.5 m at VGS = 10 V, ID = 14.9 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 24.0 m at VGS = 4.5 V, ID = 11.0 A synchronous or conventional switching PWM controllers. It has ... See More ⇒

January 2009 FDD6778A N-Channel PowerTrench MOSFET 25 V, 14.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 14.0 m at VGS = 10 V, ID = 10.0 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 9.7 A synchronous or conventional switching PWM controllers. It has ... See More ⇒

isc N-Channel MOSFET Transistor FDD6770A FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr... See More ⇒

isc N-Channel MOSFET Transistor FDD6780A FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =8.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

isc N-Channel MOSFET Transistor FDD6760A FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =3.2m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

isc N-Channel MOSFET Transistor FDD6776A FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =7.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

isc N-Channel MOSFET Transistor FDD6782A FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =10.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

isc N-Channel MOSFET Transistor FDD6778A FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒