FDD8586 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD8586
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 77 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO-252AA

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FDD8586 Datasheet (PDF)

..1. Size:388K fairchild semi
fdd8586 fdu8586.pdf

January 2007FDD8586/FDU8586tmN-Channel PowerTrench MOSFET 20V, 35A, 5.5mFeatures General Description Max rDS(on) = 5.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.5m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It h

..2. Size:287K inchange semiconductor
fdd8586.pdf

isc N-Channel MOSFET Transistor FDD8586FEATURESDrain Current : I =35A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =5.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

8.1. Size:333K fairchild semi
fdd8580 fdu8580.pdf

July 2006FDD8580/FDU8580tmN-Channel PowerTrench MOSFET 20V, 35A, 9mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically Max rDS(on) = 9m at VGS = 10V, ID = 35Ato improve the overall efficiency of DC/DC converters using Max rDS(on) =13m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has been opti

8.2. Size:813K cn vbsemi
fdd8580-6.pdf

FDD8580&-6www.VBsemi.twN-Channel 20-V (D-S)175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested 0.006 @ VGS = 4.5 V 6520200.008 @ VGS = 2.5 V 45DTO-252GDrain Connected to TabG D STop View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Par

8.3. Size:287K inchange semiconductor
fdd8580.pdf

isc N-Channel MOSFET Transistor FDD8580FEATURESDrain Current : I =35A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =9.0m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

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