FDD8586 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD8586
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 77 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 550 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Encapsulados: TO-252AA
Búsqueda de reemplazo de FDD8586 MOSFET
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FDD8586 datasheet
fdd8586 fdu8586.pdf
January 2007 FDD8586/FDU8586 tm N-Channel PowerTrench MOSFET 20V, 35A, 5.5m Features General Description Max rDS(on) = 5.5m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.5m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It h
fdd8586.pdf
isc N-Channel MOSFET Transistor FDD8586 FEATURES Drain Current I =35A@ T =25 D C Drain Source Voltage V =20V(Min) DSS Static Drain-Source On-Resistance R =5.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
fdd8580 fdu8580.pdf
July 2006 FDD8580/FDU8580 tm N-Channel PowerTrench MOSFET 20V, 35A, 9m Features General Description This N-Channel MOSFET has been designed specifically Max rDS(on) = 9m at VGS = 10V, ID = 35A to improve the overall efficiency of DC/DC converters using Max rDS(on) =13m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It has been opti
fdd8580-6.pdf
FDD8580&-6 www.VBsemi.tw N-Channel 20-V (D-S)175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a D 175_C Maximum Junction Temperature D 100% Rg Tested 0.006 @ VGS = 4.5 V 65 20 20 0.008 @ VGS = 2.5 V 45 D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Par
Otros transistores... FDD6796, FDD6N20TF, FDD6N50TF, FDD6N50TM, FDD7030BL, FDD7N25LZTM, FDD7N60NZTM, FDD8580, 2N7002, FDD86367F085, FDD86369F085, FDD8750, FDD9411F085, FDFC2P100, FDFC3N108, FDFM2N111, FDFM2P110
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