FDD8586. Аналоги и основные параметры
Наименование производителя: FDD8586
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 77 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 550 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
Тип корпуса: TO-252AA
Аналог (замена) для FDD8586
- подборⓘ MOSFET транзистора по параметрам
FDD8586 даташит
fdd8586 fdu8586.pdf
January 2007 FDD8586/FDU8586 tm N-Channel PowerTrench MOSFET 20V, 35A, 5.5m Features General Description Max rDS(on) = 5.5m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.5m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It h
fdd8586.pdf
isc N-Channel MOSFET Transistor FDD8586 FEATURES Drain Current I =35A@ T =25 D C Drain Source Voltage V =20V(Min) DSS Static Drain-Source On-Resistance R =5.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
fdd8580 fdu8580.pdf
July 2006 FDD8580/FDU8580 tm N-Channel PowerTrench MOSFET 20V, 35A, 9m Features General Description This N-Channel MOSFET has been designed specifically Max rDS(on) = 9m at VGS = 10V, ID = 35A to improve the overall efficiency of DC/DC converters using Max rDS(on) =13m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It has been opti
fdd8580-6.pdf
FDD8580&-6 www.VBsemi.tw N-Channel 20-V (D-S)175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a D 175_C Maximum Junction Temperature D 100% Rg Tested 0.006 @ VGS = 4.5 V 65 20 20 0.008 @ VGS = 2.5 V 45 D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Par
Другие IGBT... FDD6796, FDD6N20TF, FDD6N50TF, FDD6N50TM, FDD7030BL, FDD7N25LZTM, FDD7N60NZTM, FDD8580, 2N7002, FDD86367F085, FDD86369F085, FDD8750, FDD9411F085, FDFC2P100, FDFC3N108, FDFM2N111, FDFM2P110
History: FDD8580 | BUK6D230-80E
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH | AP3P020H | AP3N9R5YT | AP3N9R5MT
Popular searches
2n3565 | irf530n | pn2222a datasheet | tip41c transistor | 2n5087 | ksa1381 | bc546 | 2sc458



