FDD86369F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD86369F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 34 nS

Cossⓘ - Capacitancia de salida: 430 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm

Encapsulados: D-PAK

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FDD86369F085 datasheet

 6.1. Size:456K  fairchild semi
 fdd86369 f085.pdf pdf_icon

FDD86369F085

May 2015 FDD86369_F085 N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integ

 6.2. Size:1055K  onsemi
 fdd86369.pdf pdf_icon

FDD86369F085

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.3. Size:440K  onsemi
 fdd86369-f085.pdf pdf_icon

FDD86369F085

FDD86369-F085 N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Starte

 6.4. Size:286K  inchange semiconductor
 fdd86369.pdf pdf_icon

FDD86369F085

isc N-Channel MOSFET Transistor FDD86369 FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 7.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

MOSTRAR MÁS

Otros transistores... FDD6N50TF, FDD6N50TM, FDD7030BL, FDD7N25LZTM, FDD7N60NZTM, FDD8580, FDD8586, FDD86367F085, IRF4905, FDD8750, FDD9411F085, FDFC2P100, FDFC3N108, FDFM2N111, FDFM2P110, FDFMA2N028Z, FDFMA2P029Z