FDD86369F085 - описание и поиск аналогов

 

FDD86369F085 - Аналоги. Основные параметры


   Наименование производителя: FDD86369F085
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 34 ns
   Cossⓘ - Выходная емкость: 430 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0079 Ohm
   Тип корпуса: D-PAK
 

 Аналог (замена) для FDD86369F085

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDD86369F085 технические параметры

 6.1. Size:456K  fairchild semi
fdd86369 f085.pdfpdf_icon

FDD86369F085

May 2015 FDD86369_F085 N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integ

 6.2. Size:1055K  onsemi
fdd86369.pdfpdf_icon

FDD86369F085

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.3. Size:440K  onsemi
fdd86369-f085.pdfpdf_icon

FDD86369F085

FDD86369-F085 N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Starte

 6.4. Size:286K  inchange semiconductor
fdd86369.pdfpdf_icon

FDD86369F085

isc N-Channel MOSFET Transistor FDD86369 FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 7.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

Другие MOSFET... FDD6N50TF , FDD6N50TM , FDD7030BL , FDD7N25LZTM , FDD7N60NZTM , FDD8580 , FDD8586 , FDD86367F085 , IRF4905 , FDD8750 , FDD9411F085 , FDFC2P100 , FDFC3N108 , FDFM2N111 , FDFM2P110 , FDFMA2N028Z , FDFMA2P029Z .

History: FDD2572F085 | STU04N20

 

 
Back to Top

 


 
.