FDD8750 Todos los transistores

 

FDD8750 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD8750

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 18 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.7 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 80 pF

Resistencia drenaje-fuente RDS(on): 0.04 Ohm

Empaquetado / Estuche: D-PAK

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FDD8750 Datasheet (PDF)

1.1. fdd8750.pdf Size:342K _upd-mosfet

FDD8750
FDD8750

December 2006 FDD8750 tm N-Channel PowerTrench® MOSFET 25V, 2.7A, 40mΩ Features General Description Max rDS(on) = 40mΩ at VGS = 10V, ID = 2.7A This N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either Max rDS(on) = 60mΩ at VGS = 4.5V, ID = 2.7A synchronous or conventional switching PWM controllers.It has Low g

5.1. fdd8796 fdu8796.pdf Size:308K _fairchild_semi

FDD8750
FDD8750

March 2006 FDD8796/FDU8796 N-Channel PowerTrench MOSFET 25V, 35A, 5.7m? General Description Features Max rDS(on) = 5.7m? at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m? at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimiz

5.2. fdd8780 fdu8780.pdf Size:314K _fairchild_semi

FDD8750
FDD8750

March 2006 FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5m? General Description Features Max rDS(on) = 8.5m? at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m? at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimiz

 5.3. fdd8782 fdu8782.pdf Size:418K _fairchild_semi

FDD8750
FDD8750

November 2009 FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11m? General Description Features Max rDS(on) = 11.0m? at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m? at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been opti

5.4. fdd8770 fdu8770.pdf Size:310K _fairchild_semi

FDD8750
FDD8750

March 2006 FDD8770/FDU8770 N-Channel PowerTrench MOSFET 25V, 35A, 4.0m? General Description Features Max rDS(on) = 4.0m? at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m? at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimize

 5.5. fdd8778 fdu8778.pdf Size:358K _fairchild_semi

FDD8750
FDD8750

May 2006 FDD8778/FDU8778 tm N-Channel PowerTrench MOSFET 25V, 35A, 14m? Features General Description Max rDS(on) = 14.0m? at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m? at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It has been optim

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